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CZT853_10 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT853_10
Description  SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZT853
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT853 type is
a high current NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
PNP Complement: CZT953
SOT-223 CASE
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
6.0
A
Power Dissipation (Note 1)
PD
3.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
41.7
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=150V
10
nA
ICBO
VCB=150V, TA=100°C
1.0
μA
ICER
VCE=150V, RBE≤1.0kΩ
10
nA
IEBO
VEB=6.0V
10
nA
BVCBO
IC=100μA
200
220
V
BVCER
IC=10mA, RBE≤1.0kΩ
200
210
V
BVCEO
IC=10mA
100
110
V
BVEBO
IE=100μA
6.0
8.0
V
VCE(SAT)
IC=100mA, IB=5.0mA
22
50
mV
VCE(SAT)
IC=2.0A, IB=100mA
135
170
mV
VCE(SAT)
IC=5.0A, IB=500mA
340
mV
VBE(SAT)
IC=5.0A, IB=500mA
1.25
V
hFE
VCE=2.0V, IC=10mA
100
hFE
VCE=2.0V, IC=2.0A
100
200
300
hFE
VCE=2.0V, IC=4.0A
50
100
hFE
VCE=2.0V, IC=10A
20
30
fT
VCE=10V, IC=100mA, f=50MHz
190
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
38
pF
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R2 (1-March 2010)
www.centra lsemi.com




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