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CTLDM8002A-M621 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CTLDM8002A-M621 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page  CTLDM8002A-M621 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package. MARKING CODE: CN MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 50 V Drain-Gate Voltage VDG 50 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 280 mA Continuous Source Current (Body Diode) IS 280 mA Maximum Pulsed Drain Current IDM 1.5 A Maximum Pulsed Source Current ISM 1.5 A Power Dissipation (Note 1) PD 0.9 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance (Note 1) ΘJA 139 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSSF, IGSSR VGS=20V, VDS=0 100 nA IDSS VDS=50V, VGS=0 1.0 μA IDSS VDS=50V, VGS=0, TJ=125°C 500 μA ID(ON) VGS=10V, VDS=10V 500 mA BVDSS VGS=0, ID=10μA 50 V VGS(th) VDS=VGS, ID=250μA 1.0 2.5 V VDS(ON) VGS=10V, ID=500mA 1.5 V VDS(ON) VGS=5.0V, ID=50mA 0.15 V VSD VGS=0, IS=115mA 1.3 V rDS(ON) VGS=10V, ID=500mA 2.5 Ω rDS(ON) VGS=10V, ID=500mA, TJ=125°C 4.0 Ω rDS(ON) VGS=5.0V, ID=50mA 3.0 Ω rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 5.0 Ω gFS VDS=10V, ID=200mA 200 mS APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment FEATURES: • Low rDS(on) • Low VDS(on) • Low Threshold Voltage • Fast Switching • Logic Level Compatible • Small TLM™ 2x1mm Package Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2. TLM621 CASE R1 (17-February 2010) www.centr a lsemi.com |
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