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CY62168DV30 Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY62168DV30
Description  16-Mbit (2M x 8) MoBL짰 Static RAM
Download  13 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62168DV30 Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY62168DV30 MoBL®
Document Number : 38-05329 Rev. *I
Page 5 of 13
Capacitance
Parameter[9]
Description
Test Conditions
Max
Unit
CIN
Input capacitance
TA = 25 °C, f = 1 MHz, VCC = VCC(typ.)
8pF
COUT
Output capacitance
10
pF
Thermal Resistance
Parameter[9]
Description
Test Conditions
VFBGA
Unit
ΘJA
Thermal resistance
(Junction to ambient)
Still air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
55
°C / W
ΘJC
Thermal resistance
(Junction to case)
16
°C / W
AC Test Loads and Waveforms
Parameters
2.5 V
3.0 V
Unit
R1
16600
1103
Ω
R2
15400
1554
Ω
RTH
8000
645
Ω
VTH
1.2
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min
Typ[10]
Max
Unit
VDR
VCC for data retention
1.5
3.6
V
ICCDR
Data retention current
VCC = 1.5 V
CE1 > VCC − 0.2 V or CE2 <0.2 V
V
IN > VCC − 0.2 V or VIN < 0.2 V
––
10
μA
tCDR[9]
Chip deselect to data
retention time
0–
ns
tR[11]
Operation recovery time
55
ns
Notes
9. Tested initially and after any design or process changes that may affect these parameters.
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C
11. Full Device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs..
VCC
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
VTH
Equivalent to:
THEVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Fall time: 1 V/ns
Rise Time: 1 V/ns
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