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CY62168DV30 Datasheet(PDF) 5 Page - Cypress Semiconductor |
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CY62168DV30 Datasheet(HTML) 5 Page - Cypress Semiconductor |
5 / 13 page CY62168DV30 MoBL® Document Number : 38-05329 Rev. *I Page 5 of 13 Capacitance Parameter[9] Description Test Conditions Max Unit CIN Input capacitance TA = 25 °C, f = 1 MHz, VCC = VCC(typ.) 8pF COUT Output capacitance 10 pF Thermal Resistance Parameter[9] Description Test Conditions VFBGA Unit ΘJA Thermal resistance (Junction to ambient) Still air, soldered on a 3 × 4.5 inch, 2-layer printed circuit board 55 °C / W ΘJC Thermal resistance (Junction to case) 16 °C / W AC Test Loads and Waveforms Parameters 2.5 V 3.0 V Unit R1 16600 1103 Ω R2 15400 1554 Ω RTH 8000 645 Ω VTH 1.2 1.75 V Data Retention Characteristics (Over the Operating Range) Parameter Description Conditions Min Typ[10] Max Unit VDR VCC for data retention 1.5 – 3.6 V ICCDR Data retention current VCC = 1.5 V CE1 > VCC − 0.2 V or CE2 <0.2 V V IN > VCC − 0.2 V or VIN < 0.2 V –– 10 μA tCDR[9] Chip deselect to data retention time 0– – ns tR[11] Operation recovery time 55 – – ns Notes 9. Tested initially and after any design or process changes that may affect these parameters. 10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C 11. Full Device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) > 100 μs.. VCC VCC OUTPUT R2 50 pF INCLUDING JIG AND SCOPE GND 90% 10% 90% 10% OUTPUT VTH Equivalent to: THEVENIN EQUIVALENT ALL INPUT PULSES RTH R1 Fall time: 1 V/ns Rise Time: 1 V/ns [+] Feedback |
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