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CY62148E Datasheet(PDF) 4 Page - Cypress Semiconductor

Part # CY62148E
Description  4-Mbit (512 K 횞 8) Static RAM
Download  14 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62148E Datasheet(HTML) 4 Page - Cypress Semiconductor

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CY62148E MoBL®
Document #: 38-05442 Rev. *H
Page 4 of 14
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied .......................................... –55 °C to + 125 °C
Supply voltage to
ground potential.................. –0.5 V to 6.0 V (VCCmax + 0.5 V)
DC voltage applied to outputs
in high Z state [3, 4].............. –0.5 V to 6.0 V (VCCmax + 0.5 V)
DC input voltage [3, 4].......... –0.5 V to 6.0 V (VCCmax + 0.5 V)
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage........................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch-up current ......................................................>200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC
[5]
CY62148E
Industrial/
Automotive-A
–40 °C to +85 °C 4.5 V to 5.5 V
Notes
3. VIL(min) = –2.0 V for pulse durations less than 20 ns for I < 30 mA.
4. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a minimum of 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
6. SOIC package is available only in 55 ns speed bin.
7. Typical values are included for reference and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
8. Under DC conditions the device meets a VIL of 0.8 V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.6 V.
This is applicable to SOIC package only. Refer to AN13470 for details.
9. Chip enable (CE) must be HIGH at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
Electrical Characteristics
Over the operating range
Parameter
Description
Test Conditions
45 ns
55 ns [6]
Unit
Min
Typ[7]
Max
Min
Typ[7]
Max
VOH
Output HIGH voltage IOH = –1 mA
2.4
2.4
V
VOL
Output LOW voltage IOL = 2.1 mA
0.4
0.4
V
VIH
Input HIGH voltage
VCC = 4.5 V to 5.5 V
2.2
VCC + 0.5 2.2
VCC + 0.5
V
VIL
Input LOW voltage
VCC = 4.5 V to 5.5 V For TSOPII
package
–0.5
0.8
V
For SOIC
package
––
–0.5
0.6[8]
IIX
Input leakage current GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output leakage
current
GND < VO < VCC, output disabled
–1
+1
–1
+1
µA
ICC
VCC operating supply
current
f = fmax = 1/tRC
VCC = VCC(max)
IOUT = 0 mA
CMOS levels
15
20
15
20
mA
f = 1 MHz
2
2.5
2
2.5
ISB2
[9]
Automatic CE
power-down current
— CMOS inputs
CE > VCC – 0.2 V
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = 0, VCC = VCC(max)
–1
7
1
7
µA
[+] Feedback


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