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CP630 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CP630
Description  Power Transistor PNP - Silicon Darlington Transistor Chip
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CP630 Datasheet(HTML) 1 Page - Central Semiconductor Corp

  CP630_10 Datasheet HTML 1Page - Central Semiconductor Corp CP630_10 Datasheet HTML 2Page - Central Semiconductor Corp  
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GEOMETRY
PROCESS DETAILS
PRINCIPAL DEVICE TYPES
CZT127
CJD127
GROSS DIE PER 4 INCH WAFER
1,445
PROCESS CP630
Power Transistor
PNP - Silicon Darlington Transistor Chip
Process
EPITAXIAL PLANAR
Die Size
80 x 80 MILS
Die Thickness
8.0 MILS
Base Bonding Pad Area
18 x 27 MILS
Emitter Bonding Pad Area
34 x 34 MILS
Top Side Metalization
Al - 30,000Å
Back Side Metalization
Ti/Pd/Ag - 20,000Å
www.centra lsemi.com
R2 (22-March 2010)


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