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CY62137FV30 Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY62137FV30 Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 16 page CY62137FV30 MoBL® Document Number: 001-07141 Rev. *I Page 9 of 16 Figure 7. Write Cycle 1: WE Controlled [25, 26, 27] Figure 8. Write Cycle 2: CE Controlled [25, 26, 27] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tWC tHZOE DATAIN NOTE 28 tBW tSCE DATA I/O ADDRESS CE WE OE BHE/BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN tBW tSA CE ADDRESS WE DATA I/O OE BHE/BLE NOTE 28 Notes 25. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals are ACTIVE to initiate a write and any of these signals terminate a write by going INACTIVE. The data input setup and hold timing are referenced to the edge of the signal that terminates the write. 26. Data I/O is high impedance if OE = VIH. 27. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state. 28. During this period, the I/Os are in output state. Do not apply input signals. [+] Feedback |
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