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SPS01N60C3 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SPS01N60C3 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page 200 8-04-07 Rev. 2.1 Page 3 SP S01N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.5A - 0.75 - S Input capacitance Ciss VGS=0V, VDS=25V, f =1MHz - 100 - pF Output capacitance Coss - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, ID=0.8A, RG=100Ω - 30 - ns Rise time tr - 25 - Turn-off delay time td(off) - 55 82 Fall time tf - 30 45 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=0.8A - 0.9 - nC Gate to drain charge Qgd - 2.2 - Gate charge total Qg VDD=350V, ID=0.8A, VGS=0 to 10V - 3.9 5 Gate plateau voltage V(plateau) VDD=350V, ID=0.8A - 5.5 - V 1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3I SD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. |
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