SPS01N60C3 datasheet(3/10 Pages) INFINEON

Part #	SPS01N60C3

Description	Cool MOS??Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 10 page

200

8-04-07

Rev. 2.1

Page 3

SP

S01N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

ID=0.5A

-

0.75

-

S

Input capacitance

Ciss

VGS=0V, VDS=25V,

f

=1MHz

-

100

-

pF

Output capacitance

Coss

-

40

-

Reverse transfer capacitance

Crss

-

2.5

-

Turn-on delay time

td(on)

VDD=350V, VGS=0/10V,

ID=0.8A, RG=100Ω

-

30

-

ns

Rise time

tr

-

25

-

Turn-off delay time

td(off)

-

55

82

Fall time

tf

-

30

45

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=350V, ID=0.8A

-

0.9

-

nC

Gate to drain charge

Qgd

-

2.2

-

Gate charge total

Qg

VDD=350V, ID=0.8A,

VGS=0 to 10V

-

3.9

5

Gate plateau voltage

V(plateau) VDD=350V, ID=0.8A

-

5.5

-

V

1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

3I

SD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.

Identical low-side and high-side switch.

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