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IPW90R500C3 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPW90R500C3 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page IPW90R500C3 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1700 - pF Output capacitance C oss -83- Effective output capacitance, energy related 5) C o(er) -52- Effective output capacitance, time related 6) C o(tr) - 200 - Turn-on delay time t d(on) -70- ns Rise time t r -20- Turn-off delay time t d(off) - 400 - Fall time t f -25- Gate Charge Characteristics Gate to source charge Q gs -8 - nC Gate to drain charge Q gd -29- Gate charge total Q g - 68 tbd Gate plateau voltage V plateau - 4.6 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=6.6 A, T j=25 °C - 0.8 1.2 V Reverse recovery time t rr - 480 - ns Reverse recovery charge Q rr - 8.5 - µC Peak reverse recovery current I rrm -31- A 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=6.6 A, R G=30.9 Ω V DD=400 V, I D=6.6 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 500 V 4) I SD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch V R=400 V, I F=I S, di F/dt =100 A/µs 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f. 1) J-STD20 and JESD22 Rev. 1.0 page 3 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A |
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