Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

CY7C12481KV18-400BZC Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C12481KV18-400BZC
Description  36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Download  29 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C12481KV18-400BZC Datasheet(HTML) 10 Page - Cypress Semiconductor

Back Button CY7C12481KV18-400BZC Datasheet HTML 6Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 7Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 8Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 9Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 10Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 11Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 12Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 13Page - Cypress Semiconductor CY7C12481KV18-400BZC Datasheet HTML 14Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 29 page
background image
CY7C12461KV18, CY7C12571KV18
CY7C12481KV18, CY7C12501KV18
Document Number: 001-53194 Rev. *I
Page 10 of 29
Valid Data Indicator (QVLD)
QVLD is provided on the DDR II+ to simplify data capture on high
speed systems. The QVLD is generated by the DDR II+ device
along with data output. This signal is also edge aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
PLL
These chips use a PLL that is designed to function between 120
MHz and the specified maximum clock frequency. During power
up, when the DOFF is tied HIGH, the PLL is locked after 20
s
of stable clock. The PLL can also be reset by slowing or stopping
the input clock K and K for a minimum of 30 ns. However, it is not
necessary to reset the PLL to lock to the desired frequency. The
PLL automatically locks 20
s after a stable clock is presented.
The PLL may be disabled by applying ground to the DOFF pin.
When the PLL is turned off, the device behaves in DDR I mode
(with one cycle latency and a longer access time). For infor-
mation, refer to the application note, PLL Considerations in
QDRII/DDRII/QDRII+/DDRII+.
Application Example
Figure 1 shows two DDR II+ used in an application.
Figure 1. Application Example
DQ
A
SRAM#2
LD
CQ/CQ
K
ZQ
K
R/W BWS
BUS
MASTER
(CPU or ASIC)
DQ
Addresses
LD
R/W
R = 250ohms
Source CLK
Source CLK
Echo Clock1/Echo Clock1
Echo Clock2/Echo Clock2
R = 250ohms
BWS
DQ
A
SRAM#1
LD
K
ZQ
CQ/CQ
K
R/W BWS
[+] Feedback


Similar Part No. - CY7C12481KV18-400BZC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1248KV18 CYPRESS-CY7C1248KV18 Datasheet
913Kb / 28P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1248KV18-400BZC CYPRESS-CY7C1248KV18-400BZC Datasheet
913Kb / 28P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1248KV18-400BZXC CYPRESS-CY7C1248KV18-400BZXC Datasheet
913Kb / 28P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1248KV18-450BZXC CYPRESS-CY7C1248KV18-450BZXC Datasheet
913Kb / 28P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1248V18 CYPRESS-CY7C1248V18 Datasheet
1Mb / 27P
   36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
More results

Similar Description - CY7C12481KV18-400BZC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1246V18 CYPRESS-CY7C1246V18 Datasheet
1Mb / 27P
   36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
logo
Renesas Technology Corp
RMQCHA3636DGBA RENESAS-RMQCHA3636DGBA_15 Datasheet
846Kb / 30P
   36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
logo
Cypress Semiconductor
CY7C1246KV18 CYPRESS-CY7C1246KV18 Datasheet
913Kb / 28P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1266KV18 CYPRESS-CY7C1266KV18 Datasheet
919Kb / 28P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
logo
Renesas Technology Corp
RMQCLA3636DGBA RENESAS-RMQCLA3636DGBA Datasheet
885Kb / 30P
   36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
Dec. 01, 2014
RMQCHA3636DGBA RENESAS-RMQCHA3636DGBA Datasheet
846Kb / 30P
   36-Mbit DDR™ II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
Dec. 01, 2014
RMQCBA3636DGBA RENESAS-RMQCBA3636DGBA_15 Datasheet
849Kb / 30P
   36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency)
logo
Cypress Semiconductor
CY7C1266V18 CYPRESS-CY7C1266V18 Datasheet
1Mb / 27P
   36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1546KV18 CYPRESS-CY7C1546KV18 Datasheet
959Kb / 31P
   72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C12661KV18 CYPRESS-CY7C12661KV18 Datasheet
903Kb / 30P
   36-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com