CY7C10612DV33

16-Mbit (1 M × 16) Static RAM

Cypress Semiconductor Corporation

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198 Champion Court

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San Jose

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408-943-2600

Document Number: 001-49315 Rev. *B

Revised January 17, 2011

Features

Functional Description

The CY7C10612DV33 is a high performance CMOS Static RAM

organized as 1,048,576 words by 16 bits.

To write to the device, take Chip Enables (CE) and Write Enable

(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data

To read from the device, take Chip Enables (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

Byte High Enable (BHE) is LOW, then data from memory

complete description of Read and Write modes.

impedance state when the device is deselected (CE HIGH), the

outputs are disabled (OE HIGH), the BHE and BLE are disabled

(BHE, BLE HIGH), or during a write operation (CE LOW and WE

LOW).

The CY7C10612DV33 is available in a 54-Pin TSOP II package

with center power and ground (revolutionary) pinout.

COLUMN

DECODER

INPUT BUFFER

1M x 16

ARRAY

OE

CE

WE

BLE

BHE

Logic Block Diagram

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