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CY7C1381D-133AXC Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C1381D-133AXC
Description  18 Mbit (512 K 횞 36/1 M 횞 18) Flow Through SRAM
Download  34 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1381D-133AXC Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY7C1381D/CY7C1381F
CY7C1383D/CY7C1383F
Document Number: 38-05544 Rev. *I
Page 10 of 34
Three synchronous chip selects (CE1, CE2, CE3 [5]) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. ADSP is ignored if CE1 is
HIGH.
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE1, CE2, and CE3 [5] are all
asserted active, and (2) ADSP or ADSC is asserted LOW (if the
access is initiated by ADSC, the write inputs must be deasserted
during this first cycle). The address presented to the address
inputs is latched into the address register and the burst counter
and/or control logic, and later presented to the memory core. If
the OE input is asserted LOW, the requested data is available at
the data outputs with a maximum to tCDV after clock rise. ADSP
is ignored if CE1 is HIGH.
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, CE3 [5] are all asserted
active, and (2) ADSP is asserted LOW. The addresses
presented are loaded into the address register and the burst
inputs (GW, BWE, and BWX) are ignored during this first clock
cycle. If the write inputs are asserted active (see Truth Table for
Read/Write on page 13 for appropriate states that indicate a
write) on the next clock rise, the appropriate data is latched and
written into the device. Byte writes are allowed. All I/O are
tristated during a byte write. As this is a common I/O device, the
asynchronous OE input signal must be deasserted and the I/O
must be tristated prior to the presentation of data to DQs. As a
safety precaution, the data lines are tristated when a write cycle
is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, and CE3 [5] are all asserted
active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
HIGH, and (4) the write input signals (GW, BWE, and BWX)
indicate a write access. ADSC is ignored if ADSP is active LOW.
The addresses presented are loaded into the address register
and the burst counter, the control logic, or both, and delivered to
the memory core The information presented to DQ[A:D] is written
into the specified address location. Byte writes are allowed. All
I/O are tristated when a write is detected, even a byte write.
Because this is a common I/O device, the asynchronous OE
input signal must be deasserted and the I/O must be tristated
prior to the presentation of data to DQs. As a safety precaution,
the data lines are tristated when a write cycle is detected,
regardless of the state of OE.
Burst Sequences
CY7C1381D/CY7C1381F/CY7C1383D/CY7C1383F
provides
an on-chip two-bit wraparound burst counter inside the SRAM.
The burst counter is fed by A[1:0], and can follow either a linear
or interleaved burst order. The burst order is determined by the
state of the MODE input. A LOW on MODE selects a linear burst
sequence. A HIGH on MODE selects an interleaved burst order.
Leaving MODE unconnected causes the device to default to a
interleaved burst sequence.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation sleep mode. Two clock cycles
are required to enter into or exit from this sleep mode. While in
this mode, data integrity is guaranteed. Accesses pending when
entering the sleep mode are not considered valid nor is the
completion of the operation guaranteed. The device must be
deselected prior to entering the sleep mode. CE1, CE2, CE3 [5],
ADSP, and ADSC must remain inactive for the duration of tZZREC
after the ZZ input returns LOW.
Table 1. Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Table 2. Linear Burst Address Table (MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Note
5. CE3, CE2 are for TQFP and 165 FBGA packages only. 119 BGA is offered only in 1 chip enable.
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