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2N3440L Datasheet(PDF) 1 Page - Microsemi Corporation |
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2N3440L Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 T4-LDS-0022 Rev. 2 (080663) Page 1 of 2 DEVICES LEVELS 2N3439 2N3440 JAN 2N3439L 2N3440L JANTX 2N3439UA 2N3440UA JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3439 2N3440 Unit Collector-Emitter Voltage VCEO 350 250 Vdc Collector-Base Voltage VCBO 450 300 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Collector Current IC 1.0 Adc Total Power Dissipation UA @ TA = +25°C (1) @ TC = +25°C (2) @ TSP = +25°C (3) PT 0.8 5.0 2.0 W Operating & Storage Temperature Range Top , Tstg -65 to +200 °C 1) Derate linearly @ 4.57mW/°C for TA > +25°C 2) Derate linearly @ 28.5mW/°C for TC > +25°C 3) Derate linearly @ 14mW/°C for TSP > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc RBB1 = 470Ω;VBB1 = 6V L = 25mH (min); f = 30 – 60Hz 2N3439 2N3440 V(BR)CEO 350 250 Vdc Collector-Emitter Cutoff Current VCE = 300Vdc VCE = 200Vdc 2N3439 2N3440 ICEO 2.0 2.0 µAdc Emitter-Base Cutoff Current VEB = 7.0Vdc IEBO 10 µAdc Collector-Emitter Cutoff Current VCE = 450Vdc, VBE = -1.5Vdc VCE = 300Vdc, VBE = -1.5Vdc 2N3439 2N3440 ICEX 5.0 5.0 µAdc Collector-Base Cutoff Current VCB = 360Vdc VCB = 250Vdc VCB = 450Vdc VCB = 300Vdc 2N3439 2N3440 2N3439 2N3440 ICBO 2.0 2.0 5.0 5.0 µAdc TO-5 * 2N3439L, 2N3440L TO-39 * (TO-205AD) 2N3439, 2N3440 UA 2N3439UA, 2N3440UA * See Appendix A for Package Outline |
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