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2SK3438 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3438 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3438 2010-01-29 4 Channel temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source Voltage VDS (V) Capacitance – VDS Channel temperature Tc (°C) Vth – Tc Channel temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 0 20 60 40 100 80 200 0 40 80 120 160 0.1 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 1 10 100 Common source Tc = 25°C Pulse test VGS = 0, −1 V 1 3 5 10 0 −80 −40 0 40 80 120 160 1 2 3 4 5 6 Common source VDS = 10 V ID = 1 mA Pulse test 20 16 12 8 4 0 1 0.1 1 10 100 1000 10 100 1000 10000 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 0 0 10 20 30 40 100 200 300 400 500 VDD = 100 V VDS VGS 400 200 Common source ID = 10 A Tc = 25°C Pulse test 0 −80 −40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 Common source VGS = 10 V Pulse test ID = 10 A 5 2.5 |
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