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2SK3397 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3397 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3397 2009-09-29 3 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID 23 4 5 0 40 60 80 100 20 01 4 6 8 10 0 0.4 0.6 0.8 1.0 0.2 02 10 100 1 10 110 100 1 10 0 20 40 60 80 100 0.4 0.6 0.8 1.0 0 0.2 2 4 0 40 60 80 100 20 0 1 100 5 100 3 1 6 120 12 1.2 1000 1000 Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) VGS = 3V 3.25 3.5 3.75 4 8 10 6 4.5 5 Common source Tc = 25°C Pulse Test VGS = 3 V 3.25 3.5 3.75 5 10 4.5 4 8 6 Common source Tc = 25°C Pulse Test Tc = −55°C 100 25 Common source VDS = 10 V Pulse Test ID = 70 A 15 35 Common source Tc = 25℃ Pulse Test Tc = −55°C 25 100 Common source VDS = 10 V Pulse Test VGS = 10,15V Common source Tc = 25°C Pulse Test |
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