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2SK3236 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK3236 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3236 2009-09-29 3 ID − VDS ID − VDS ID − VGS VDS − VGS ⎪Yfs⎪ − ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) RDS (ON) − ID 3.5 0 0 4 12 20 0.2 0.4 1 VGS = 3 V 3.25 3.75 4 8 10 5 0.6 0.8 8 16 Common source, Tc = 25°C Pulse test 5 0 0 VGS = 3 V Common source Tc = 25°C Pulse test 4.5 6 8 10 20 60 100 24 10 6 8 40 80 4 3.5 0 20 ID = 35 A 0 0.2 0.6 1 48 20 12 16 0.4 0.8 Common source Tc = 25°C Pulse test 10 Tc = −55°C Common source VDS = 10 V Pulse test 25 100 0 0 20 60 100 2 4 10 6 8 40 80 0.1 0.001 1100 0.01 10 Common source Tc = 25°C Pulse test 4 VGS = 10 V 25 Tc = −55°C 100 100 1 1 100 Common source VDS = 10 V Pulse test 10 10 |
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