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2SK3089 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3089
Description  Chopper Regulator DC?묭C Converter, and Motor Drive
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3089 Datasheet(HTML) 1 Page - Toshiba Semiconductor

  2SK3089_09 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3089_09 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3089_09 Datasheet HTML 3Page - Toshiba Semiconductor  
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2SK3089
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
2SK3089
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Low drain−source ON resistance
: RDS (ON) = 25 mΩ (typ.)
High forward transfer admittance
: |Yfs| = 20 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 30 V)
Enhancement mode
: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
30
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
40
Drain current
Pulse (Note 1)
IDP
80
A
Drain power dissipation (Tc = 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
134
mJ
Avalanche current
IAR
40
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.5
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 60 μH, RG = 25 Ω, IAR = 40 A
Note 3: Repetitive rating pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)


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