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2SK3085 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3085 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3085 2010-01-29 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate -source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.8 A ⎯ 1.7 2.2 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.8 A 2.0 3.0 ⎯ S Input capacitance Ciss ⎯ 800 ⎯ Reverse transfer capacitance Crss ⎯ 6 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 65 ⎯ pF Rise time tr ⎯ 15 ⎯ Turn-on time ton ⎯ 50 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-off time toff ⎯ 85 ⎯ ns Total gate charge Qg ⎯ 20 ⎯ Gate-source charge Qgs ⎯ 10 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 3.5 A ⎯ 10 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 3.5 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 14 A Forward voltage (diode) VDSF IDR = 3.5 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1400 ⎯ ns Reverse recovery charge Qrr IDR = 3.5 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 9 ⎯ μC Marking Duty ≤ 1%, tw = 10 μs 0 V 10 V VGS RL = 111 Ω VDD ≈ 220 V ID = 1.8 A VOUT Lot No. Note 4 K3085 Part No. (or abbreviation code) Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. |
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