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2SD2092 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SD2092 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SD2092 2006-11-21 4 Collector current IC (A) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) VBE (sat) – IC 0.1 0.05 Common emitter IC/IB = 100 0.1 0.3 0.5 1 3 0.3 0.5 1 3 5 100 25 Tc = −55°C 0.03 0.05 Common emitter IC/IB = 100 0.3 0.5 1 3 5 10 0.05 0.1 0.3 1 3 −55 25 Tc = 100°C 0.1 0.5 0 0 0.5 1.5 2.5 3.0 0.4 0.8 1.2 1.4 1.6 Common emitter VCE = 1 V −55 25 Tc = 100°C 1.0 0.6 0.2 1.0 2.0 Pulse width tw (s) rth – tw 0.001 1000 10 100 0.01 0.1 30 0.3 3 1 100 10 1 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink (1) (2) Collector-emitter voltage VCE (V) Safe Operating Area 0.03 2 5 10 30 50 100 200 0.05 0.1 0.3 0.5 1 3 5 10 10 ms* 100 ms* 1 ms* VCEO max *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 μs* IC max (pulsed)* IC max (continuous) DC operation Tc = 25°C |
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