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2SD2012 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SD2012
Description  Audio Frequency Power Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2012 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SD2012
2009-12-01
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
1000
0.01
10
30
50
100
300
500
0.03 0.05
0.1
0.3 0.5
1
3
Common emitter
VCE = 5 V
−25
Tc = 100°C
25
−25
1
0.01
0.01
0.1
0.3
0.5
0.03
0.05
0.03 0.05
0.1
0.3 0.5
1
3
5
Common emitter
IC/IB = 10
Tc = 100°C
25
3.0
0
0
2.5
2.0
1.5
1.0
0.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Common emitter
VCE = 5 V
−25
Tc = 100°C
25
3.0
0
0
Common emitter
Tc = 25°C
2.5
2.0
1.5
1.0
0.5
1
2
3
4
5
6
7
80
70
60
50
40
30
20
100
90
IB = 10 mA
Ambient temperature Ta (°C)
PC – Ta
30
0
0
25
20
15
10
5
25
50
75
100
125
150
175
(1) Ta = Tc Infinite heat sink
(2) No heat sink
(1)
(2)
Collector-emitter voltage VCE (V)
Safe Operating Area
10
1
0.1
0.3
0.5
1
3
5
3
5
10
30
50
100
300
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
IC max (continuous)
DC operation
Tc = 25°C
100 ms*
10 ms*
1 ms*
VCEO max


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