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2SC5200 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SC5200
Description  Power Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5200 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC5200
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
• High breakdown voltage: VCEO = 230 V (min)
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
5.0
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5.0
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
230
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
160
DC current gain
hFE (2)
VCE = 5 V, IC = 7 A
35
60
Collector-emitter saturation voltage
VCE (sat)
IC = 8 A, IB = 0.8 A
0.4
3.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 7 A
1.0
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
30
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
200
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)


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