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2SC4081 Datasheet(PDF) 1 Page - Weitron Technology

Part # 2SC4081
Description  General Purpose Transistor NPN Silicon
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Manufacturer  WEITRON [Weitron Technology]
Direct Link  http://www.weitron.com.tw
Logo WEITRON - Weitron Technology

2SC4081 Datasheet(HTML) 1 Page - Weitron Technology

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2SC4081
SOT-323(SC-70)
1
BASE
COLLECTOR
EMITTER
3
2
General Purpose Transistor
NPN Silicon
Lead(Pb)-Free
P b
http://www.weitron.com.tw
WEITRON
1/3
10-Jul-08
FEATURES
Excellent hFE linearity
Complements the 2A1576A
MAXIMUM RATINGS (TA=25
℃ unless otherwise noted)
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=50
μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50
μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
0.1
μA
DC current gain
hFE(1)
VCE=6V,IC=1mA
120
560
Collector-emitter saturation voltage
VCE(sat)
IC=50mA,IB=5mA
0.4
V
Transition frequency
fT
VCE=12V,IC=2mA,f=30MHz
180
MHz
Collector output capacitance
Cob
VCB12V,IE=0,f=1MHz
3.5
pF
CLASSIFICATION OF
hFE(1)
Rank
S
R
Q
Range
120-270
180-390
270-560
Marking
S
B
R
B
Q
B
V
50
V
7
V
150
mA
200
150
-55 to +150
mW
Parameter
Symbol
Value
Units


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