SSM3J133TU datasheet(2/6 Pages) TOSHIBA

Part #	SSM3J133TU

Description	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS??

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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SSM3J133TU

2010-11-30

2

Electrical Characteristics(Ta = 25°C)

Characteristics

Symbol

Test Conditions

Min

Typ.

Max

Unit

V (BR) DSS ID = -1 mA, VGS = 0 V

-20

⎯

V

Drain-source breakdown voltage

V (BR) DSX ID = -1 mA, VGS = 5 V

. (Note 4)

-15

⎯

V

Drain cut-off current

IDSS

VDS = -20 V, VGS = 0 V

⎯

-1

μA

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = -3 V, ID = -1 mA

-0.3

⎯

-1.0

V

Forward transfer admittance

⏐Yfs⏐

VDS = -3 V, ID = -1.0 A

(Note 3)

5.2

10.4

⎯

S

ID = -3.0 A, VGS = -4.5 V

(Note 3)

⎯

24.9

29.8

ID = -2.5 A, VGS = -2.5 V

(Note 3)

⎯

31.1

39.7

ID = -1.5 A, VGS = -1.8 V

(Note 3)

⎯

38.8

56.0

Drain-source ON-resistance

RDS (ON)

ID = -0.5 A, VGS = -1.5 V

(Note 3)

⎯

47.4

88.4

m

Ω

Input capacitance

Ciss

⎯

840

⎯

Output capacitance

Coss

⎯

118

⎯

Reverse transfer capacitance

Crss

VDS = -10 V, VGS = 0 V

f = 1 MHz

⎯

99

⎯

pF

Turn-on time

ton

⎯

32

⎯

Switching time

Turn-off time

toff

VDD = -10 V, ID = -2.0 A

VGS = 0 to -2.5 V, RG = 4.7 Ω

⎯

107

⎯

ns

Total gate charge

Qg

⎯

12.8

⎯

Gate-source charge

Qgs1

⎯

1.4

⎯

Gate-drain charge

Qgd

VDD = -10 V, ID = -4.0 A,

VGS = -4.5 V

⎯

3.0

⎯

nC

Drain-Source forward voltage

VDSF

ID = 5.5A, VGS = 0 V

(Note3)

⎯

0.83

1.2

V

Note 3: Pulse test

Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the

drain-source breakdown voltage is lowered in this mode.

Switching Time Test Circuit

(a) Test Circuit

Notice on Usage

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the

SSM3J133TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness

and pad area. When using this device, please take heat dissipation into consideration.

VDD = -10 V

RG = 4.7 Ω

Duty

≤ 1%

VIN: tr, tf < 5 ns

Common source

Ta = 25°C

IN

0

−2.5V

10

μs

VDD

OUT

RL

ton

10%

90%

−2.5 V

0 V

90%

10%

toff

tr

tf

VDS (ON)

VDD

(b) VIN

(c) VOUT

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