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CEP07N65 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEP07N65 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page CEP07N65/CEB07N65 CEF07N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 650 1.3 166 28 7 ±30 V W A A V W/ C 1 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP07N65 CEF07N65 650V 650V 1.3Ω 1.3Ω 7A 7A d 10V 10V 0.4 50 28d 7 d CEB07N65 650V 1.3Ω 7A 10V Lead free product is acquired. TO-220/263 TO-220F PRELIMINARY http://www.cetsemi.com This is preliminary information on a new product in development now . Details are subject to change without notice . Rev 2. 2008.Feb. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75 RθJC RθJA 2.5 65 |
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