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CEB01N6G Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEB01N6G Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 600 0.33 41 4 1 ±30 V W A A V W/ C 1 G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP01N6G CEF01N6G 600V 600V 9.3Ω 9.3Ω 1A 1A d 10V 10V TO-220/263 TO-220F 0.22 27 4 d 1 d CEP01N6G/CEB01N6G CEF01N6G CEB01N6G Lead free product is acquired. 600V 9.3Ω 1A 10V http://www.cetsemi.com Details are subject to change without notice . Rev 1. 2009.July Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 3 RθJC RθJA 4.5 65 S G D |
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