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RJH60F7ADPK Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. RJH60F7ADPK
Description  Silicon N Channel IGBT High Speed Power Switching
Download  8 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RJH60F7ADPK Datasheet(HTML) 3 Page - Renesas Technology Corp

   
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RJH60F7ADPK
Preliminary
R07DS0237EJ0300 Rev.3.00
Page 3 of 7
Jan 05, 2011
Main Characteristics
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Junction Temparature Tj (°C)
Typical Output Characteristics
160
120
80
40
12345
0
0
0
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Pulse Test
Ta = 25°C
160
120
80
40
Pulse Test
Ta = 25°C
9.8 V
V
GE = 8 V
8.2 V
8.4 V
8.6 V
8.8 V
9.2 V
9.4 V
9 V
15 V
10 V
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
02468
10
VCE = 10 V
Pulse Test
Gate to Emitter Voltage VGE (V)
25°C
–25
°C
Tc = 75
°C
9.6 V
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
Junction Temparature Tj (°C)
Maximum Safe Operation Area
1000
100
1
10
0.1
1
100
10
1000
Tc = 25
°C
Single pulse
PW
=
10
μs
0
2
1
3
5
4
7
6
6
8
10
12
20
16
18
14
50 A
90 A
IC = 20 A
Pulse Test
Ta = 25°C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
−25
0
25
75
125
50
100
150
VGE = 15 V
Pulse Test
50 A
20 A
IC = 90 A
2
3
5
7
4
6
8
−25
0
25
75
125
50
100
150
VCE = 10 V
Pulse Test
1 mA
IC = 10 mA


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