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RJH60F7ADPK Datasheet(PDF) 1 Page - Renesas Technology Corp

Part No. RJH60F7ADPK
Description  Silicon N Channel IGBT High Speed Power Switching
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RJH60F7ADPK Datasheet(HTML) 1 Page - Renesas Technology Corp

   
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R07DS0237EJ0300 Rev.3.00
Page 1 of 7
Jan 05, 2011
Preliminary Datasheet
RJH60F7ADPK
Silicon N Channel IGBT
High Speed Power Switching
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
C
G
E
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
4
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
600
V
Gate to emitter voltage
VGES
±30
V
Tc = 25°C
IC
90
A
Collector current
Tc = 100°C
IC
50
A
Collector peak current
ic(peak)
Note1
180
A
Collector to emitter diode forward peak current
iDF(peak)
Note2
100
A
Collector dissipation
PC
328.9
W
Junction to case thermal impedance (IGBT)
j-c
0.38
°C/W
Junction to case thermal impedance (Diode)
j-c
2.0
°C/W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW
 5 s, duty cycle  1%
R07DS0237EJ0300
(Previous: REJ03G1837-0200)
Rev.3.00
Jan 05, 2011


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