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RJH60F7ADPK Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. RJH60F7ADPK
Description  Silicon N Channel IGBT High Speed Power Switching
Download  8 Pages
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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RJH60F7ADPK Datasheet(HTML) 4 Page - Renesas Technology Corp

   
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RJH60F7ADPK
Preliminary
R07DS0237EJ0300 Rev.3.00
Page 4 of 7
Jan 05, 2011
10
100
1000
10000
0
100
50
150
200
250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
40
80
120
160
200
IC = 50 A
Ta = 25°C
VGE
VCE
VCC = 600 V
300 V
VCC = 600 V
300 V
VGE = 0 V
f = 1 MHz Ta = 25°C
Collector to Emitter Voltage VCE (V)
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
0
20
40
60
80
100
0123
4
5
VGE = 0 V
Pulse Test
Ta = 25°C


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