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M16C Datasheet(PDF) 57 Page - Renesas Technology Corp |
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M16C Datasheet(HTML) 57 Page - Renesas Technology Corp |
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57 / 112 page  R01DS0015EJ0100 Rev.1.00 Page 57 of 109 Feb 07, 2011 M16C/65C Group 5. Electrical Characteristics Notes: 1. Definition of program and erase cycles The program and erase cycles refer to the number of per-block erasures. If the program and erase cycles are n (n = 10,000), each block can be erased n times. For example, if a 4 KB block is erased after writing 2 word data 1,024 times, each to a different address, this counts as one program and erase cycles. Data cannot be written to the same address more than once without erasing the block (rewrite prohibited). 2. Cycles to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed). 3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 256 groups before erasing them all in one operation. In addition, averaging the erasure cycles between blocks A and B can further reduce the actual erasure cycles. It is also advisable to retain data on the erasure cycles of each block and limit the number of erase operations to a certain number. 4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase command at least three times until the erase error does not occur. 5. Customers desiring program/erase failure rate information should contact a Renesas Electronics sales office. 6. The data hold time includes time that the power supply is off or the clock is not supplied. 7. After an erase start or erase restart, if an interval of at least 20 ms is not set before the next suspend request, the erase sequence cannot be completed. Table 5.10 Flash Memory (Data Flash) Electrical Characteristics VCC1 = 2.7 to 5.5 V at Topr = -20 to 85°C/-40 to 85°C, unless otherwise specified. Symbol Parameter Conditions Standard Unit Min. Typ. Max. - Program and erase cycles (1), (3), (4) VCC1 = 3.3 V, Topr = 25°C 10,000 (2) times - 2 word program time VCC1 = 3.3 V, Topr = 25°C 300 4000 μs - Lock bit program time VCC1 = 3.3 V, Topr = 25°C 140 3000 μs - Block erase time VCC1 = 3.3 V, Topr = 25°C 0.2 3.0 s td(SR-SUS) Time delay from suspend request until suspend ms - Interval from erase start/restart until following suspend request 0 μs - Suspend interval necessary for auto-erasure to complete (7) 20 ms - Time from suspend until erase restart μs - Program, erase voltage 2.7 5.5 V - Read voltage 2.7 5.5 V - Program, erase temperature −20/−40 85 °C tPS Flash memory circuit stabilization wait time 50 μs - Data hold time (6) Ambient temperature = 55 °C 20 year 5 3 f BCLK () ---------------- + 30 1 f BCLK () ---------------- + |
Similar Part No. - M16C_11 |
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Similar Description - M16C_11 |
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