www.vishay.com

4

Document Number: 65702

S10-0635-Rev. A, 22-Mar-10

Vishay Siliconix

SiR880DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

- 0.8

- 0.5

- 0.2

0.1

0.4

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

02

4

6

8

10

0

40

80

120

160

200

0

1

1

1

0

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

0.1

1

10

10

Single Pulse

BVDSS Limited

1ms

10 ms

100 ms

1 s

DC

10 s