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LC378000RP Datasheet(PDF) 3 Page - Sanyo Semicon Device

Part No. LC378000RP
Description  Internally Synchronized Silicon Gate 8M (1,048,576-word x 8-bit, 524,288-word x 16-bit) Mask ROM
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Maker  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
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LC378000RP Datasheet(HTML) 3 Page - Sanyo Semicon Device

   
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No. 5793-3/4
LC378000RP
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VCC
–0.3 to +7.0
V
Input pin voltage
VIN
–0.3* to VCC + 0.3
V
Output pin voltage
VOUT
–0.3 to VCC + 0.3
V
Allowable power dissipation
Pd max
Ta = 25°C
1.0
W
Operating temperature
Topr
–10 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Note: Application of stresses greater than or equal to the maximum ratings may lead to device destruction.
*: Minimum value minus 3.0 V for pulses with widths of 30 ns or less.
Note: These parameters are not tested in all units, but rather are sampled in a subset of units produced.
Note: Values in parentheses are guaranteed at Ta = 25°C.
Note: tOD is stipulated as the time from the rise of either CE or OE (whichever occurs first) to the point when the output goes to the high-impedance state.
These parameters are not tested in all units, but rather are sampled in a subset of units produced.
Values in parentheses are for VCC = 4.5 to 5.5 V.
Specifications
Absolute Maximum Ratings*
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input pin capacitance
CIN
VIN = 0 V. Reference value using the Sanyo DIP.
8
pF
Output pin capacitance
COUT
VOUT = 0 V. Reference value using the Sanyo DIP.
10
pF
Capacitance Characteristics* at Ta = 25°C, f = 1.0 MHz
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
VCC max
2.6
5.0
5.5
V
Input high-level voltage
VIH
2.2
VCC + 0.3
V
Input low-level voltage
VIL
–0.3
0.6
V
DC Allowable Operating Ranges at Ta = –10 to +70°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Operating current drain
ICCA1
CE = 0.2 V, VI = VCC – 0.2 V/0.2 V
30
mA
ICCA2
CE = VIL, IO = 0 mA, VI = VIH/VIL, f = 10 MHz
90
mA
Standby current drain
ICCS1
CE = VCC – 0.2 V
30 (1.0)
µA
ICCS2
CE = VIH
1.0 (0.3)
mA
Input leakage current
ILI
VIN = 0 to VCC
±1.0
µA
Output leakage current
ILO
CE or OE = VIH, VOUT = 0 to VCC
±1.0
µA
Output high-level voltage
VOH
IOH = –0.5 mA
0.8 VCC
V
Output low-level voltage
VOL
IOL = 0.5 mA
0.2
V
DC Electrical Characteristics at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cycle time
tCYC
200 (100)
ns
Address access time
tAA
200 (100)
ns
CE enable time
tCEON
200 (135)
ns
CE access time
tCA
200 (110)
ns
OE access time
tOA
100 (40)
ns
Output hold time
tOH
20
ns
Output disable time*
tOD
100
ns
AC Characteristics at Ta = –10 to +70°C, VCC = 2.6 to 5.5 V


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