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LC36256AL Datasheet(PDF) 4 Page - Sanyo Semicon Device |
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LC36256AL Datasheet(HTML) 4 Page - Sanyo Semicon Device |
4 / 7 page LC36256AL, AML-70/85/10/12 No. 4163-4/7 Input/Output Capacitance at Ta = 25°C, f = 1 MHz Parameter Symbol Conditions min typ max Unit Input/output capacitance CI/O VI/O = 0V 8 pF Input capacitance CIN VIN = 0V 6 pF Note: These parameters were obtained through sampling, and not full-lot measurement. AC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ±10% AC testing conditions Input pulse voltage level : 0.8 V, 2.2 V Input rise and fall time : 5 ns Input - output timing level : 1.5 V Output load : 1 TTL gate + CL = 100 pF (85 ns/100 ns/120 ns) 1 TTL gate + CL = 30 pF (70 ns) (including scope and jig capacitance) Read Cycle Parameter Symbol LC36256AL, AML -70 -85 -10 -12 Unit min max min max min max min max Read cycle time tRC 70 85 100 120 ns Address access time tAA 70 85 100 120 ns CE access time tCA 70 85 100 120 ns OE access time tOA 35 45 50 60 ns Output hold time tOH 20 20 20 20 ns CE output enable time tCOE 10 10 10 10 ns OE output enable time tOOE 5 5 5 5 ns OE output disable time tCOD 0 30 0 30 0 30 0 30 ns OE output disable time tOOD 0 30 0 30 0 30 0 30 ns Write Cycle LC36256AL, AML Parameter -70 -85 -10 -12 Unit min max min max min max min max Write cycle time tWC 70 85 100 120 ns Address valid to end of write tAW 65 75 80 100 ns Address setup time tAS 0 0 0 0 ns Write pulse width tWP 50 50 60 70 ns CE setup time tCW 65 75 80 100 ns Write recovery time (WE) tWR 0 0 0 0 ns Write recovery time (CE) tWR1 0 0 0 0 ns Data setup time tDS 30 30 35 40 ns Data hold time tDH 0 0 0 0 ns WE output enable time tWOE 10 10 10 10 ns WE output disable time tWOD 0 25 0 25 0 25 0 25 ns |
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