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CY2304 Datasheet(PDF) 5 Page - Cypress Semiconductor |
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CY2304 Datasheet(HTML) 5 Page - Cypress Semiconductor |
5 / 14 page CY2304 Document Number: 38-07247 Rev. *I Page 5 of 14 Maximum Ratings Supply voltage to ground potential.................–0.5 V to +7.0 V DC input voltage (except Ref)...............–0.5 V to VDD + 0.5 V DC input voltage REF.............................................–0.5 V to 7 V Storage temperature ..................................–65 °C to +150 °C Junction temperature ..................................................150 °C Static discharge voltage (per MIL-STD-883, Method 3015).............................> 2000 V Operating Conditions for CY2304SXC Commercial Temperature Devices Parameter Description Min Max Unit VDD Supply voltage 3.0 3.6 V TA Operating temperature (ambient temperature) 0 70 °C CL Load capacitance (below 100 MHz) – 30 pF Load capacitance (from 100 MHz to 133 MHz) – 15 pF CIN Input capacitance[3] –7 pF tPU Power-up time for all VDDs to reach minimum specified voltage (power ramps must be monotonic) 0.05 50 ms Electrical Characteristics for CY2304SXC Commercial Temperature Devices Parameter Description Test Conditions Min Max Unit VIL Input LOW voltage – 0.8 V VIH Input HIGH voltage 2.0 – V IIL Input LOW current VIN = 0 V – 50.0 A IIH Input HIGH current VIN = VDD – 100.0 A VOL Output LOW voltage[4] IOL = 8 mA (–1, –2) – 0.4 V VOH Output HIGH voltage[4] IOH = –8 mA (–1, –2) 2.4 – V IDD (PD mode) Power-down supply current REF = 0 MHz – 12.0 A IDD Supply current Unloaded outputs, 100 MHz REF, Select inputs at VDD or GND –45.0 mA Unloaded outputs, 66 MHz REF (–1,–2) – 32.0 mA Unloaded outputs, 33 MHz REF (–1,–2) – 18.0 mA Notes 3. Applies to both REF clock and FBK. 4. Parameter is guaranteed by design and characterization. Not 100% tested in production. [+] Feedback |
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Similar Description - CY2304_11 |
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