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CMPDM303NH Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CMPDM303NH Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CMPDM303NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM303NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 303C MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continuous Drain Current (Steady State) ID 3.6 A Maximum Pulsed Drain Current, tp=10μs IDM 14.4 A Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=12V, VDS=0 10 μA IDSS VDS=20V, VGS=0 1.0 μA BVDSS VGS=0, ID=250μA 30 V VGS(th) VGS=VDS, ID=250μA 0.6 1.2 V rDS(ON) VGS=4.5V, ID=1.8A 0.027 0.04 Ω rDS(ON) VGS=2.5V, ID=1.8A 0.039 0.078 Ω gFS VDS=5.0V, ID=3.6A 11.8 S Crss VDS=10V, VGS=0, f=1.0MHz 45 pF Ciss VDS=10V, VGS=0, f=1.0MHz 373 pF Coss VDS=10V, VGS=0, f=1.0MHz 68 pF Qg(tot) VDD=10V, VGS=4.5V, ID=3.6A 8.8 13 nC Qgs VDD=10V, VGS=4.5V, ID=3.6A 0.9 1.4 nC Qgd VDD=10V, VGS=4.5V, ID=3.6A 1.8 2.7 nC ton VDD=10V, ID=3.6A, RG=10Ω 8.7 ns toff VDD=10V, ID=3.6A, RG=10Ω 29.1 ns FEATURES: • Low rDS(ON) (0.078Ω MAX @ VGS=2.5V) • High current (ID=3.6A) • Logic level compatibility APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment SOT-23F CASE R0 (20-October 2010) www.centra lsemi.com |
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