SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – JANUARY 1996

7

COMPLEMENTARY TYPE –

SXTA92

PARTMARKING DETAIL –

SID

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

300

V

Collector-Emitter Voltage

300

V

Emitter-Base Voltage

6V

Continuous Collector Current

500

mA

1W

Operating and Storage Temperature Range

-65 to +150

°C

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

300

V

Collector-Emitter

Breakdown Voltage

300

V

Emitter-Base

Breakdown Voltage

6V

Collector Cut-Off

Current

0.1

µ

A

Emitter Cut-Off Current

0.1

µ

A

Collector-Emitter

Saturation Voltage

0.5

V

Base-Emitter

Saturation Voltage

0.9

V

Static Forward Current

Transfer Ratio

25

40

40

Transition

Frequency

50

MHz

f=20MHz

Output Capacitance

6pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMTA42 datasheet.

SXTA42

C

C

B

E

SOT89

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