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FZTA42 Datasheet(PDF) 1 Page - Diodes Incorporated

Part No. FZTA42
Description  SOT223 NPN SILICON PLANAR
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
7
FEATURES
* Suitable for video output stages in TV sets
and switch mode power supplies
* High breakdown voltage
COMPLIMENTARY TYPE – FZTA92
PARTMARKING DETAIL – DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5V
Base Current
IB
100
mA
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
300
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
300
V
IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO
0.1
µ
A
VCB=200V, IE=0
Emitter Cut-Off Current IEBO
0.1
µ
A
VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5
V
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, IB=2mA
Static Forward Current
Transfer Ratio
hFE
25
40
40
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
Transition
Frequency
fT
50
MHz
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
6pF
VCB=20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.
FZTA42
C
C
E
B
ISSUE
3 – SEPTEMBER 2007




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