PJP24N10 datasheet(2/5 Pages) PANJIT

Part #	PJP24N10

Description	100V N-Channel Enhancement Mode MOSFET

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Manufacturer	PANJIT [Pan Jit International Inc.]

Direct Link	http://www.panjit.com.tw

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2 / 5 page

PAGE . 2

June 03, 2010-REV.0

1

PJP24N10 / PJF24N10

ELECTRICAL CHARACTERISTICS ( T

A=25

OC unless otherwise noted )

NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%.

VDD

VOUT

VIN

RG

RL

Switching

TestCircuit

GateCharge

TestCircuit

VDD

VGS

RG

RL

1mA

P a ra m e te r

S ymb o l

Te s t C o nd i ti o n

M i n.

Typ .

Ma x.

Uni ts

S ta ti c

D r a i n- S o urc e B re a k d o wn Vo lta g e

B V

D S S

V

GS = 0 V , I D = 2 5 0 u A

1 0 0

-

V

Ga te Thre s ho ld Vo lta g e

V

GS (th)

V

D S = V GS , I D = 2 5 0 u A

2 .0

-

4 .0

V

D ra i n-S o urc e On-S ta te

Re s i s ta nc e

R

D S ( o n)

V

GS= 10V, I D= 30A

-

18.6

24

mΩ

Ze ro Ga te Vo lta g e D ra i n

C urre nt

I

D S S

V

DS=80V, VGS=0V

-

1

uA

Gate Body Leakage

I

GS S

V

GS = + 2 0 V , V D S = 0 V

-

+1 0 0

nΑ

Dynamic

To ta l Ga te C ha rg e

Q

g

V

D S = 5 0 V , ID = 3 0 A ,

V

GS = 1 0 V

-

6 0 .6

7 8

nC

Ga te -S o urc e C ha rg e

Q

g s

-

8 .2

-

Ga te -D ra i n C ha rg e

Q

g d

-

21.4

-

Turn-On D e la y Ti me

t

d (o n)

V

DD=50V

,

I

D =1A

V

GS = 1 0 V , RG=1.6

Ω

-

18.4

26

ns

Turn-On Ri s e Ti m e

t

r

-

9.2

12

Turn-Off D e la y Ti me

t

d (o ff)

-

5 6

6 8

Turn-Off F a ll Ti m e

t

f

-

1 8 .8

2 6

Inp ut C a p a c i ta nc e

C

i s s

V

D S = 5 0 V , V GS = 0 V

f=1 .0 MH

Z

-

1 4 5 0

3 2 0 0

p F

Outp ut C a p a c i ta nc e

C

o s s

-

155

200

Re ve rs e Tra ns fe r

C a p a c i ta nc e

C

rs s

-

110

165

S o urc e - D ra i n D i o d e

Ma x. D i o d e F o rwa rd C urr e nt

I

S

-

4 2

A

D i o d e F o rwa rd Vo lta g e

V

S D

I

S = 3 0 A , V GS = 0 V

-

1 .3

V

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