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PJP5N60 Datasheet(PDF) 1 Page - Pan Jit International Inc.

Part No. PJP5N60
Description  600V N-Channel Enhancement Mode MOSFET
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Manufacturer  PANJIT [Pan Jit International Inc.]
Direct Link  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJP5N60 Datasheet(HTML) 1 Page - Pan Jit International Inc.

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PAGE . 1
March 31,2010-REV.00
PJP5N60 / PJF5N60
FEATURES
• 5A , 600V, R
DS(ON)=2.1
@V
GS=10V, ID=2.5A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
600V N-Channel Enhancement Mode MOSFET
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Gate
Drain
Source
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
INTERNAL SCHEMATIC DIAGRAM
1
2
3
G
D
S
1
2
3
G
D
S
TYPE
MARKING
PACKAGE
PACKING
PJP5N60
P5N60
TO-220AB
50PCS/TUBE
PJF5N60
F5N60
ITO-220AB
50PCS/TUBE
PA RA ME TE R
S ymb o l
P J P 5 N6 0
P J F 5 N6 0
Uni ts
D r a i n- S o ur c e Vo lta g e
V
D S
6 0 0
V
Ga te - S o ur c e Vo lta g e
V
GS
+3 0
V
C o nti nuo us D ra i n C ur re nt
I
D
5
5
A
P uls e d D r a i n C urr e nt 1)
I
D M
2 0
2 0
A
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T
A = 2 5
OC
P
D
8 9
0 .7 1
4 4 .6
0 .3 6
W
Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e
T
J , T S TG
-5 5 to +1 5 0
OC
Avalanche Energy with Single Pulse
I
AS=5A, VDD=50V, L=28mH
E
A S
3 5 0
mJ
Junction-to-Case Thermal Resistance
R
θ
J C
1 .4 0
2 .8 0
OC /W
Junction-to Ambient Thermal Resistance
R
θ
J A
6 2 .5
1 0 0
OC /W


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