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STAD-NOV.24.2009

PJP1N80 / PJU1N80

FEATURES

• 1A, 800V, R

Ω

@V

• Low ON Resistance

• Fast Switching

• Low Gate Charge

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charge and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

MECHANICAL DATA

• Case: TO-220AB / TO-251 Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

ORDERINGINFORMATION

800V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

Note: 1. Maximum DC current limited by the package

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Gate

Drain

Source

TO-220AB/TO-251

TO-220AB

INTERNAL SCHEMATIC DIAGRAM

TO- 2 5 1

2

3

3

2

1

1

2

3

G

D

S

1

2

3

G

D

S

TYPE

MARKING

PACKAGE

PACKING

PJP1N80

P1N80

TO-220AB

50PCS/TUBE

PJU1N80

U1N80

TO-251

80PCS/TUBE

PA RA ME TE R

S ymb o l

P J P 1 N8 0

P J U1 N8 0

Uni ts

D r a i n- S o ur c e Vo lta g e

V

D S

8 0 0

V

Ga te - S o ur c e Vo lta g e

V

GS

+3 0

V

C o nti nuo us D ra i n C ur re nt

I

D

1

1

A

I

D M

4

4

A

Ma xi mum P o we r D i s s i p a ti o n

D e ra ti ng fa c to r

T

P

D

4 5

0 .3 6

3 1

0 .2 5

W

Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e

T

-5 5 to +1 5 0

Avalanche Energy with Single Pulse

I

E

A S

9 .8

mJ

Junction-to-Case Thermal Resistance

R

θ

J C

2 .7 8

4

Junction-to Ambient Thermal Resistance

R

θ

J A

6 2 .5

1 0 0