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PJP1N80 Datasheet(PDF) 1 Page - Pan Jit International Inc.

Part No. PJP1N80
Description  800V N-Channel Enhancement Mode MOSFET
Download  6 Pages
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Manufacturer  PANJIT [Pan Jit International Inc.]
Direct Link  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJP1N80 Datasheet(HTML) 1 Page - Pan Jit International Inc.

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PAGE . 1
STAD-NOV.24.2009
PJP1N80 / PJU1N80
FEATURES
• 1A, 800V, R
DS(ON)=16
@V
GS=10V, ID=0.5A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERINGINFORMATION
800V N-Channel Enhancement Mode MOSFET
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Gate
Drain
Source
TO-220AB/TO-251
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
TO- 2 5 1
2
3
3
2
1
1
2
3
G
D
S
1
2
3
G
D
S
TYPE
MARKING
PACKAGE
PACKING
PJP1N80
P1N80
TO-220AB
50PCS/TUBE
PJU1N80
U1N80
TO-251
80PCS/TUBE
PA RA ME TE R
S ymb o l
P J P 1 N8 0
P J U1 N8 0
Uni ts
D r a i n- S o ur c e Vo lta g e
V
D S
8 0 0
V
Ga te - S o ur c e Vo lta g e
V
GS
+3 0
V
C o nti nuo us D ra i n C ur re nt
I
D
1
1
A
P uls e d D r a i n C urr e nt 1)
I
D M
4
4
A
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng fa c to r
T
A = 2 5
OC
P
D
4 5
0 .3 6
3 1
0 .2 5
W
Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e
T
J , T S TG
-5 5 to +1 5 0
OC
Avalanche Energy with Single Pulse
I
AS=1.4A, VDD=50V, L=10mH
E
A S
9 .8
mJ
Junction-to-Case Thermal Resistance
R
θ
J C
2 .7 8
4
OC /W
Junction-to Ambient Thermal Resistance
R
θ
J A
6 2 .5
1 0 0
OC /W


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