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FZT655 Datasheet(PDF) 2 Page - Diodes Incorporated |
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FZT655 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 2 page SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 FEBRUARY 1995 7 FEATURES * Low saturation voltage COMPLEMENTARY TYPE FZT755 PARTMARKING DETAIL FZT655 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 2A Continuous Collector Current IC 1A Power Dissipation at Tamb=25°C Ptot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 150 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 0.1 µ A VCB=125V Emitter Cut-Off Current IEBO 0.1 µ A VEB=3V Collector-Emitter Saturation Voltage VCE(sat) 0.5 0.5 V V IC=500mA, IB=50mA* IC=1A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=500mA, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=500mA, VCE=5V* Static Forward Current Transfer Ratio hFE 50 50 20 300 IC=10mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* Transition Frequency fT 30 MHz IC=10mA, VCE=20V f=20MHz Output Capacitance Cobo 20 pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% FZT655 FZT655 C C E B 3 - 212 3 - 211 TYPICAL CHARACTERISTICS VCE(sat) v IC I+ - Collector Current (Amps) Single Pulse Test at Tamb=25°C 0.01 0.1 10 1 I+ - Collector Current (Amps) VBE(sat) v IC IC/IB=10 I+ - Collector Current (Amps) hFE v IC 0.01 10 0.1 1 VCE=5V 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 IC/IB=10 0.4 40 60 80 100 I+ - Collector Current (Amps) VBE(on) v IC Switching Speeds I+ - Collector Current (Amps) 0.1 1 IB1=IB2=IC/10 0.01 ts tf td tr 0.6 0.7 0 ts µs 2.0 1.0 3.0 td tr tf µs 0.3 0.2 0.1 0.4 0.5 0.18 0.10 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 VCE=5V VCE=10V 11000 100ms 10ms 10 DC 0.01 VCE - Collector Emitter Voltage (V) Safe Operating Area 1ms 300µs 10 100 0.1 1 |
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