FZT655 datasheet(2/2 Pages) DIODES

Part #	FZT655

Description	SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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SOT223 NPN SILICON PLANAR

HIGH PERFORMANCE TRANSISTOR

ISSUE 3 FEBRUARY 1995

7

FEATURES

* Low saturation voltage

COMPLEMENTARY TYPE FZT755

PARTMARKING DETAIL FZT655

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

150

V

Collector-Emitter Voltage

VCEO

150

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

150

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

150

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Current ICBO

0.1

µ

A

VCB=125V

Emitter Cut-Off Current

IEBO

0.1

µ

A

VEB=3V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.5

V

IC=500mA, IB=50mA*

IC=1A, IB=200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.1

V

IC=500mA, IB=50mA*

Base-Emitter

Turn-On Voltage

VBE(on)

1.0

V

IC=500mA, VCE=5V*

Static Forward Current

Transfer Ratio

hFE

50

20

300

IC=10mA, VCE=5V*

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

Transition Frequency

fT

30

MHz

IC=10mA, VCE=20V

f=20MHz

Output Capacitance

Cobo

20

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

FZT655

C

E

B

3 - 212

3 - 211

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

Single Pulse Test at Tamb=25°C

0.01

0.1

10

1

I+ -

Collector Current (Amps)

VBE(sat) v IC

IC/IB=10

I+ -

Collector Current (Amps)

hFE v IC

0.01

10

0.1

1

VCE=5V

0

0.01

10

0.1

1

0.6

0.8

1.0

1.2

IC/IB=10

0.4

40

60

80

100

I+ -

Collector Current (Amps)

VBE(on) v IC

Switching Speeds

I+ -

Collector Current (Amps)

0.1

1

IB1=IB2=IC/10

0.01

ts

tf

td

tr

0.6

0.7

0

ts

µs

2.0

1.0

3.0

td

tr

tf

µs

0.3

0.2

0.1

0.4

0.5

0.18

0.10

20

0

0.01

10

0.1

1

0.6

0.8

1.0

1.2

0.4

VCE=5V

VCE=10V

11000

100ms

10ms

10

DC

0.01

VCE - Collector Emitter Voltage (V)

Safe Operating Area

1ms

300µs

10

100

0.1

1

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