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FZT560 Datasheet(PDF) 1 Page - Diodes Incorporated |
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FZT560 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page  SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt V CEO * 150mA continuous current *P tot = 2 Watt PARTMARKING DETAIL – FZT560 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -500 V Collector-Emitter Voltage VCEO -500 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -500 mA Continuous Collector Current IC -150 mA Power Dissipation at Tamb=25°C Ptot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -500 V IC=-100µA Collector-Emitter Breakdown Voltage VCEO(SUS) -500 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-500V Collector Cut-Off Current ICES -100 nA VCE=-500V Emitter Cut-Off Current IEBO -100 nA VEB=-5V Collector-Emitter Saturation Voltage VCE(sat) -0.20 -0.5 V V IC=-20mA, IB=-2mA IC=-50mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-10mA* Base-Emitter Turn On Voltage VBE(on) -0.9 V IC=-50mA, VCE=-10V* Static Forward Current Transfer Ratio hFE 100 80 15 typ 300 300 IC=-1mA, VCE=-10V IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* Transition Frequency fT 60 MHz IC=-10mA, VCE=-20V f=50MHz Output Capacitance Cobo 8pF VCB=-20, f=1MHz Switching times ton toff 110 typ. 1.5 typ ns µs VCE=-100, IC=-50mA, IB1=-5mA,IB2=10mA, * Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% C C E B FZT560 |
Similar Part No. - FZT560 |
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Similar Description - FZT560 |
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