FCX717 datasheet(2/2 Pages) DIODES

Part #	FCX717

Description	SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-12

-35

V

I

C=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-12

-25

V

I

C=-10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

-5

-8.5

V

I

E=-100µA

Collector Cut-Off

Current

I

CBO

-100

nA

V

CB=-10V

Emitter Cut-Off Current

I

EBO

-100

nA

V

EB=-4V

Collector Emitter

Cut-Off Current

I

CES

-100

nA

V

CES=-10V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-12

-110

-230

-20

-150

-320

mV

I

C=-0.1A, IB=-10mA*

I

C=-1A, IB=-10mA*

I

C=-3A, IB=-50mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-0.92

-1.05

V

I

C=-3A, IB=-50mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-0.85

-1.0

V

I

C=-3A, VCE=-2V*

Static Forward Current

Transfer

Ratio

h

FE

300

160

60

45

475

450

240

100

70

I

C=-10mA, VCE=-2V*

I

C=-0.1A, VCE=-2V*

I

C=-3A, VCE=-2V*

I

C=-8A, VCE=-2V*

I

C=-10A, VCE=-2V*

Transition

Frequency

f

T

80

110

MHz

I

C=-50mA, VCE=-10V

f=100MHz

Output Capacitance

C

obo

21

30

pF

V

CB=-10V, f=1MHz

Turn-On Time

t

(on)

70

ns

V

CC=-6V, IC=-2A

I

B1=IB2=50mA

Turn-Off Time

t

(off)

130

ns

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

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