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LB1832V Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1832V Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 7 page Specifications Absolute Maximum Ratings at Ta = 25°C Allowable Operating Ranges at Ta = 25°C Electrical Characteristics at Ta = 25°C, VCC = VS = 3 V No. 4179-2/7 LB1832V Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max –0.3 to +8.0 V VS max –0.3 to +8.0 V Output applied voltage VOUT –0.3 to VS + VSF V Input applied voltage VIN –0.3 to +0.8 V GND pin current IGND 2.0 A Pd max1 Independent IC 550 mW Allowable power dissipation Pd max2 Mounted on the specified printed circuit board 1000 mW (40 × 30 × 1.5 mm3 glass epoxy) Operating temperature Topr –20 to +75 °C Storage temperature Tstg –40 to +150 °C Parameter Symbol Conditions Ratings Unit VE VCC = VS; Using the same power supply 1.6 to 7.0 V Supply voltage VCC Using separate power supplies for VCC and VS 2.5 to 7.0 V VS 1.0 to 7.0 V Input high-level voltage VIH 1.6 to 7.0 V Input low-level voltage VIL –0.3 to +0.4 V Parameter Symbol Conditions min typ max Unit ICC0 Standby: ICC + IS 0.1 3 µA Current drain ICC1 ICC 3.5 5 mA IS1 Forward/reverse: IS 65 85 mA IS2 Brake: IS 60 80 mA Output saturation voltage VO (sat)1 IOUT = 500 mA (VCC = VS = 2 V) 0.3 0.4 V (upper + lower) VO (sat)2 IOUT = 1 A (VCC = VS = 2.2 V) 0.6 0.8 V Variation in output applied voltage IOUT = 500 mA –20 0 +20 % Sustainable output voltage VO (SUS) IOUT = 1 A 9 V Input current IIN VIN = 5 V, VCC = 7 V 100 µA [Spark killer diode] Reverse current IS (leak) VCC, VS = 7 V 10 µA Forward voltage VSF IOUT = 1 A 1.7 V |
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