DMG1024UV

Document number: DS31974 Rev. 5 - 2

2 of 6

www.diodes.com

April 2010

© Diodes Incorporated

DMG1024UV

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

-

-

100

nA

Gate-Source Leakage

-

-

±1.0

μA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

-

1.0

V

Static Drain-Source On-Resistance

-

0.3

0.45

Ω

0.4

0.6

0.5

0.75

-

9

-

10

Forward Transfer Admittance

-

1.4

-

S

Diode Forward Voltage

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

60.67

-

pF

f = 1.0MHz

Output Capacitance

-

9.68

-

pF

Reverse Transfer Capacitance

-

5.37

-

pF

Total Gate Charge

-

736.6

-

pC

Gate-Source Charge

-

93.6

-

pC

Gate-Drain Charge

-

116.6

-

pC

Turn-On Delay Time

-

5.1

-

ns

Turn-On Rise Time

-

7.4

-

ns

Turn-Off Delay Time

-

26.7

-

ns

Turn-Off Fall Time

-

12.3

-

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

0.3

0.6

0.9

1.2

1.5

01

2

3

4

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.2V

GS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

0

0.3

0.6

0.9

1.2

1.5

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A