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DMN2020LSN-7 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN2020LSN-7 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMN2020LSN Document number: DS31946 Rev. 2 - 2 1 of 6 www.diodes.com September 2009 © Diodes Incorporated DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2KV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SC-59 • Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage Continuous VGSS ±12 V Continuous Drain Current Steady State TA = 25°C TA = 85°C ID 6.9 4.5 A Pulsed Drain Current (Note 4) IDM 30 A Thermal Characteristics Characteristic Symbol Value Units Power Dissipation (Note 3) PD 0.61 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 204 °C /W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. SC-59 TOP VIEW Pin Out Configuration TOP VIEW EQUIVALENT CIRCUIT Source Gate Protection Diode Gate Drain D G S ESD PROTECTED TO 2kV Please click here to visit our online spice models database. |
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