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LB1696 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1696 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 9 page  Electric Characteristics at Ta=25 °C, VCC =5 V, VM =45 V Parameter Symbol Conditions min typ max Unit Supply current ICC Forward 16 23 mA Output saturation voltage VOsat1 IO = 1 A, VO (sink) + VO (source) 2.1 3.0 V VOsat2 IO = 2 A, VO (sink) + VO (source) 3.0 4.2 V Output leakage current IO(leak) 100 µA Hall amplifier Input bias current IHB 14 µA Common-mode input voltage range VICM 1.5 3.2 V Hysteresis width ∆VIN 27 32 36 mV Input voltage L → HVSLH 816 23 mV Input voltage H → LVSHL –23 –16 –8 mV FG pin (rate pulse output) Output low level voltage VFGL IFG = 5 mA 0.4 V Dull-up resistance RFG 7.5 10 12.5 k Ω Forward F/R operation VFR1 0 0.8 V Reverse F/R operation VFR2 4.2 5.0 V Current limit operator limiter VRF 0.42 0.5 0.6 V Thermal shutdown operation temperature TSD Design target 150 165 °C Hysteresis width ∆TSD Design target 25 °C Reduced voltage protection operation voltage VLVSD 3.5 3.8 4.1 V Reduced voltage protection release voltage VLVSD(OFF) 4.3 4.5 V Hysteresis width ∆VLVSD 0.4 0.5 0.6 V C pin charge current 1 ICL1 R1=68k Ω, R2 = open 15 21 27 µA C pin charge current 2 ICL2 R1=68k Ω,R2=10kΩ 111 158 205 µA C pin discharge current ICH R1=68k Ω 168 225 282 µA C pin charge start voltage VCL R1=68k Ω 0.3 0.4 0.5 V C pin discharge start voltage VCH R1=68k Ω 1.5 2.0 2.5 V Output current neglect time tsm R1=68k Ω, C = 6800 pF 42 51 60 µs Output off time 1 tso1 R1=68k Ω, R2 = open, C = 6800 pF 462 545 628 µs Output off time 2 tso2 R1=68k Ω,R2=10kΩ, C = 6800 pF 51 74 97 µs Regulator output voltage VCC(REG) 4.5 5.2 5.9 V Ambient temperature, Ta — °C With arbitrarily large heat sink Independent IC LB1696 No.5244-2/9 |
Similar Part No. - LB1696 |
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Similar Description - LB1696 |
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