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DMB53D0UV-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMB53D0UV-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMB53D0UV Document number: DS31651 Rev. 6 - 2 2 of 7 www.diodes.com December 2009 © Diodes Incorporated DMB53D0UV Electrical Characteristics - MOSFET @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 μA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ 1.0 5.0 μA VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 0.7 0.8 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 3.1 4 Ω VGS = 4V, ID = 100mA ⎯ 4 5 VGS = 2.5V, ID = 80mA Forward Transconductance gFS 180 ⎯ ⎯ mS VDS = 10V, ID = 100mA, f = 1.0KHz DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 25 ⎯ pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 5 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 2.1 ⎯ pF Electrical Characteristics - NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 4) V(BR)CBO 50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 4) V(BR)EBO 6 — — V IE = 1μA, IC = 0 DC Current Gain (Note 4) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 4) VCE(SAT) — — 100 300 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 4) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 4) VBE 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current (Note 4) ICBO ICBO — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Collector-Emitter Cut-Off Current (Note 4) ICES — — 100 nA VCE = 45V Gain Bandwidth Product fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Output Capacitance COBO — — 4.5 pF VCB = 10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = 5V, RS = 2.0kΩ, f = 1.0kHz, BW = 200Hz Notes: 4. Short duration pulse test used to minimize self-heating effect. |
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