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DMP2004K-7 Datasheet(PDF) 1 Page - Diodes Incorporated

Part No. DMP2004K-7
Description  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2004K-7 Datasheet(HTML) 1 Page - Diodes Incorporated

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DMP2004K
Document number: DS30933 Rev. 4 - 2
1 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMP2004K
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Very Low Gate Threshold Voltage VGS(TH) <1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 1) VGS = -4.5V
ID
-600
mA
Pulsed Drain Current
IDM
-1.9
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 1)
PD
550
mW
Thermal Resistance, Junction to Ambient
RθJA
227
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250mA
Zero Gate Voltage Drain Current
IDSS
-1.0
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
±1.0
μA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
-0.5
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
0.7
1.1
1.7
0.9
1.4
2.0
Ω
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
Forward Transfer Admittance
|Yfs|
200
mS
VDS = -10V, ID = -0.2A
Diode Forward Voltage (Note 4)
VSD
-0.5
-1.2
V
VGS = 0V, IS = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
175
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
30
pF
Reverse Transfer Capacitance
Crss
20
pF
Notes:
1.
Device mounted on FR-4 PCB.
2.
No purposefully added lead.
3.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
SOT-23
TOP VIEW
Equivalent Circuit
TOP VIEW
ESD protected
Source
Gate
Protection
Diode
Gate
Drain
D
G
S


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