LMN200B02-7 datasheet(3/10 Pages) DIODES

Part #	LMN200B02-7

Description	200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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DS30658 Rev. 7 - 2

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LMN200B02

Electrical Characteristics: Pre-Biased PNP Transistor (Q1)

@TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Cut Off Current

ICBO

⎯

-100

nA

VCB = -50V, IE = 0

Collector-Emitter Cut Off Current

ICEO

⎯

-500

nA

VCE = -50V, IB = 0

Emitter-Base Cut Off Current

IEBO

⎯

-0.5

-1

mA

VEB = -5V, IC = 0

Collector-Base Breakdown Voltage

V(BR)CBO

-50

⎯

V

IC = -10 uA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-50

⎯

V

IC = -2 mA, IB = 0

Input Off Voltage

VI(OFF)

⎯

-0.55

-0.3

V

VCE = -5V, IC = -100uA

Output Voltage

VOH

-4.9

⎯

V

VCC = -5V, VB = -0.05V,

RL = 1K

Ouput Current (leakage current same as ICEO)

IO(OFF)

⎯

-500

nA

VCC = -50V, VI = 0V

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.15

V

IC = -10 mA, IB = -0.5 mA

⎯

-0.2

V

IC = -50mA, IB = -5mA

⎯

-0.2

V

IC = -20mA, IB = -1mA

⎯

-0.25

V

IC = -100mA, IB= -10mA

⎯

-0.25

V

IC = -200mA, IB= -10mA

⎯

-0.3

V

IC = -200mA, IB = -20mA

Equivalent On-Resistance*

RCE(SAT)

⎯

1.5

Ω

IC = -200mA, IB = -10mA

DC Current Gain

hFE

60

150

⎯

VCE = -5V, IC = -20 mA

60

215

⎯

VCE = -5V, IC = -50 mA

60

245

⎯

VCE = -5V, IC = -100 mA

60

250

⎯

VCE = -5V, IC = -200 mA

Input On Voltage

VI(ON)

-2.45

-0.7

⎯

V

VO = -0.3V, IC = -2 mA

Output Voltage (equivalent to VCE(SAT) or VO(ON) )

VOL

⎯

-0.065

-0.15

V

VCC = -5V, VB = -2.5V,

Io/II = -50mA /-2.5mA

Input Current

Ii

⎯

-9

-28

mA

VI = -5V

Base-Emitter Turn-on Voltage

VBE(ON)

⎯

-1.13

-1.3

V

VCE = -5V, IC = 200mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-3.2

-3.6

V

IC = -50mA, IB = -5mA

⎯

-4.6

-5.5

IC = -80mA, IB = -8mA

Input Resistor (Base), +/- 30%

R2

⎯

0.47

⎯

K

Ω

⎯

Pull-up Resistor (Base to Vcc supply), +/- 30%

R1

⎯

10

⎯

K

Ω

⎯

Resistor Ratio (Input Resistor/Pull-up

resistor) +/- 20%

R1/R2

⎯

21

⎯

SMALL SIGNAL CHARACTERISTICS

Transition Frequency (Gain Bandwidth Product)

fT

⎯

200

⎯

MHz

VCE = -10V, IE = -5mA,

f = 100MHz

Collector Capacitance, (Ccbo-Output Capacitance)

CC

⎯

20

⎯

pF

VCB = -10V, IE = 0A,

f = 1MHz

* Pulse Test: Pulse width, tp<300

μS, Duty Cycle, d<=0.02

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