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DA27101 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DA27101 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Ver. DED This product complies with the RoHS Directive (EU 2002/95/EC). Publication date: November 2010 1 DA27101 Silicon epitaxial planar type For high speed switching circuits DA2J101 in SSSMini2 type package Features Small reverse current I R Short reverse recovery time t rr Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard) Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Reverse voltage VR 80 V Maximum peak reverse voltage VRM 80 V Forward current IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current * IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note) *: 1 t = 1 s Electrical Characteristics T a = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 0.92 1.20 V Reverse voltage VR IR = 100 mA 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 1.2 pF Reverse recovery time * trr IF = 10 mA, VR = 6 V, Irr = 0.25 × IR 3 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *: trr measurement circuit 90% t p = 2 µs t r = 0.35 ns δ = 0.05 10% t r t p t rr V R I F t t A Bias Application Unit (N-50BU) Pulse Generator (PG-10N) R s = 50 Ω Wave Form Analyzer (SAS-8130) R i = 50 Ω Input Pulse Output Pulse I F = 10 mA V R = 6 V I rr = 0.25 × IR Package Code SSSMini2-F4-B Pin Name 1: Cathode 2: Anode Marking Symbol: A1 |
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